to-220 parameter l value unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 7.0 v collector current i c 5.0 a base current i b 0.5 a total dissipation at p tot 30 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c 2SD560 description parameter symbol test conditions min. typ. max. unit collector cut-off current i cbo v cb =100v, i e =0 1.0 ua emitter cut-off current i ebo v eb =7.0v, i c =0 10 ua collector-emitter sustaining voltage v ceo i c =30ma, i b =0 100 v dc current gain h fe(1) v ce =2.0v, i c =3.0a 2000 15000 h fe(2) v ce =2.0v, i c =5.0a 500 collector-emitter saturation voltage v ce(sat) i c =3.0a,i b =3.0ma 1.5 v base saturation voltage v be(sat) i c =3.0a,i b =3.0ma 2.0 v current gain bandwidth product f t v ce =10v,i c =500ma 4.0 mhz npn silicon power ttransistors product specification the 2SD560 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. this transistor is ideal for direct driving from the ic output of devices such as pulse motor drivers and relay drivers, and pc terminals. electrical characteristics absolute maximum ratings ( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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